Faraday Technology lands 2nm AI chip design win on Samsung process
The move from 4nm to 2nm on performance and power grounds signals that leading AI accelerator designs are now pushing past the point where older nodes suffice, and hybrid-bonded 3D DRAM stacking is entering mainstream custom silicon. Chip designers and data-centre hardware planners should track how Samsung's 2nm competes with TSMC's advanced nodes for AI workloads. Faraday's record-setting NRE also reflects rising design-service demand from US customers sourcing advanced packaging in Asia.
IT之家Source